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CLEO/Europe-IQEC Technical Program
- MONDAY
12 - 14 September, Nice Acropolis, Nice, France
-
-
-
- ROOM 2
-
- 08:30 - 10:30
- Session CMA: Yb3+ Lasers
- Presider: Heinz Weber, University of Bern, SWITZERLAND
-
- CMA1 8:30 - 8:45
- Yb:GdCOB, a New Crystal for sub-100-fs Diode-Pumped Lasers, Frederic
Druon, Francois Balembois, Patrick Georges, Alain Brun, Institut d'Optique,
Orsay , FRANCE, A. Courjaud, C. Hoenninger, Francois Salin, Universite
Bordeaux 1, Talence , FRANCE, A. Aron, F. Mougel, Gerard Aka, D. Vivien,
ENSCP, Paris 05, FRANCE
- We present a 90-fs, at 1046 nm, passively mode-locked diode-pumped
laser using a Yb:GdCOB crystal.
-
- CMA2 8:45 - 9:00
- 1.1-W Femtosecond Diode-Pumped Yb:KGd(WO4)2 Laser, F. Brunner,
J. Aus der Au, G.J. Spuehler, L. Krainer, ETH Hoenggerberg, Zurich, SWITZERLAND,
Rudiger Paschotta, Swiss Federal Institute of Technology, Zurich, SWITZERLAND,
F. Morier-Genoud, Ursula Keller, Swiss Federal Institute of Technology,
Zurich, SWITZERLAND, N. Lichtenstein, JDS Uniphase AG, Zuerich, SWITZERLAND,
S. Weiss, JDS Uniphase AG, Zuerich, SWITZERLAND, Christoph Harder, JDS-Uniphase
Corp., Zurich, SWITZERLAND, A.A. Lagatsky, Belarus State Polytechnical
Academy, Minsk, BELARUS, A. Abdolvand, Belarus State Polytechnical Academy,
Minsk, BELARUS, N.V. Kuleshov, Belarus State Polytechnical Academy, Minsk,
BELARUS
- We present to our knowledge the first diode-pumped, passively mode
locked Yb:KGW laser. We obtain 1.1W average power in pulses of 176 fs and
a peak power of 64 kW using a semiconductor saturable absorber mirror as
a mode locker.
-
- CMA3 9:00 - 9:15
- 3-W, Diode-Pumped, Tunable, CW Yb:GdCOB Laser, Sebastien
Chenais, Frederic Druon, Francois Balembois, Patrick Georges, Alain Brun,
Institut d'Optique, Orsay, FRANCE, M. Zavelani-Rossi, CNRS, Palaisseau,
FRANCE, F. Auge, Laboratoire d'Optique Appliquee, Palaiseau, FRANCE, J.P.
Chambaret, LOA-ENSTA, Palaiseau , FRANCE, F. Mougel, Gerard Aka, D. Vivien,
ENSCP, Paris 05, FRANCE
- We present a diode-pumped Yb:GdCOB laser producing 3.2W CW at 1043
nm with a slope efficiency of 68% and an optical-to-optical conversion
efficiency of 36%.
-
- CMA4 9:15 - 9:30
- Power-Scalable Femtosecond Thin Disk Yb:YAG Lasers, Rudiger
Paschotta, Swiss Federal Institute of Technology, Zurich, SWITZERLAND,
G.J. Spuehler, J. Aus der Au, ETH Hoenggerberg, Zurich, SWITZERLAND, Ursula
Keller, Swiss Federal Institute of Technology, Zurich, SWITZERLAND, M.
Moser, CSEM SA, Zuerich, SWITZERLAND, S. Erhard, M. Karszewski, Adolf Giesen,
Universitaet Stuttgart, Stuttgart, GERMANY
- A thin disk Yb:YAG laser, mode-locked with a semiconductor saturable
absorber mirror, generates 730-fs pulses with as much as 16 W average power
and 560 kW peak power. The concept allows for further power scaling.
-
- CMA5 9:30 - 9:45
- Comparison of Yb3+ Doped Silicate Crystalline Hosts for the 1 µmLaser
Oscillation, P.H. Haumesser, R. Gaumé, B. Viana, Gerard Aka,
D. Vivien, ENSCP, Paris 05, FRANCE, B. Ferrand, CEA Grenoble/LETI, Grenoble,
FRANCE
- Laser effect around 1 µm have been demonstrated under T1:SA pumping
in three different Yb3+ doped crystalline silicate hosts. The results are
analysed taking into account the thermal and spectroscopic properties as
well as the crystal field stength of the matrices.
-
- CMA6 9:45 - 10:00
- Dependence of Yb:KYW Minilaser Performance on Yb Concentration,
A.N. Kuzmin, A.A. Demidovich, G.I. Ryabtsev, National Academy of
Sciences of Belarus, Minsk, BELARUS, M.B. Danailov, Sincrotrone-Trieste,
Trieste, ITALY, W. Strek, Polish Academy of Sciences, Wroclaw, POLAND,
A.N. Titov, Russian Academy of Sciences, St. Petersburg, RUSSIA
- CW and Q-switched LD pumped KY(WO4)2:Yb3+ with ytterbium concentration
of 5%,10%,and 20% laser operation have been investigated and the main characteristics
of the KY(WO4)2:Yb3+ laser are presented. A maximum slope of efficiency
of 66% was achieved for this active medium.
-
- CMA7 10:00 - 10:30 (Invited)
- Pulsed Thin Disk Lasers, Daniel Mueller, S. Erhard, M. Larionov,
Adolf Giesen, Universitaet Stuttgart, Stuttgart, GERMANY, I. Johannsen,
Deutsches Zentrum fur Luft-und Raumfahrt e.V., Stuttgart, GERMANY, K. Contag,
Forschungs. fuer Strahlwerkzeuge mbH, Stuttgart, GERMANY
- Results for Nd:YAG and Yb:YAG Q-switched and mode-locked high power
thin disk lasers and pulse amplifiers will be reported.
-
-
- 11:00 - 12:30
- Session: Nonlinear Beam Propagation and Shaping
- Presider: Eric Freysz, Universite Bordeaux, FRANCE
-
- CMG1 11:00 - 11:15
- Singly-Resonant Parametric Oscillation in Periodically Poled KTiOPO4
Pumped by Bessel Beam, Valdas Pasiskevicius, , H. Karlsson, J. Tellefsen,
Fredrik Laurell, Royal Institute of Technology, Stockholm, SWEDEN, R.
Butkus, V. Smilgevicius, Algis Piskarskas, Vilnius University, Vilnius,
LITHUANIA
- Generation of a single signal-idler pair with the diffraction-limited
idler produced in the axial direction is demonstrated in PPKTP OPO pumped
by Bessel beam. The OPO output tuning,energetics and dynamics will be discussed.
-
- CMG2 11:15 - 11:30
- Second Harmonic Generation of Bessel Vortex, A. Matijosius,
Algis Piskarskas, V. Smilgevieius, A. Stabinis, Vilnius University, Vilnius,
LITHUANIA
- Second harmonic generation of Bessel vortex (J1 beam) in nonlinear
crystal has been investigated. The double charged vortex decay into two
singly charged vortices was observed.
-
-
- CMG3 11:30 - 11:45
- Reconfigurable Beam Shaping in Parametric Wave Mixing, Gabriel
Molina-Terriza, Lluis Torner, Universitat Politecnica de Catalunya, Barcelona,
SPAIN
- A new method that allows the simultaneous frequency-doubling and shaping
of a Gaussian input beam into a variety of light patterns is reported.
The method is based on the dynamical evolution of vortices in seeded second-harmonic
generation
-
- CMG4 11:45 - 12:00
- Reconstruction of Blurred Images Via Controlled Spatial - Solitons
Formation, A. Bramati, W. Chinaglia, S. Minardi, Paolo Di Trapani,
Universita degli Studi dell'Insubria, Como, ITALY
- Diffracted digital images are reconstructed by exciting spatial solitons
in a bulk X2 Crystal, in regime of single-pass parametric amplification
of the quantum noise.
-
- CMG5 12:00 - 12:15
- Features of Dark Spatial Optical Solitons in Planar Waveguides on
Lithium Niobate, V. Shandarov, State Univ of Control Sys & Radioelectronics,
Tomsk, RUSSIA, Detlef Kip, Monika Wesner, J. Hukriede, Universitaet Osnabrueck,
Osnabrueck, GERMANY
- Formation of dark photovoltaic spatial solitions in specially doped
by iron or copper planar optical waveguides in lithium niobate has been
experimentally investigated and discussed
-
-
- CMG6 12:15 - 12:30
- Generation of Spatial Solitons in Narrow-Gap Semiconductors, V.
Skarka, Universite d'Angers, Angers 1, FRANCE, V.I. Berezhiani, Institute
of Physics, Tbilisi, GEORGIA
- Dynamics of the self-trapping of short laser pulses in narrow-band-gap
semiconductors is studied. The nonparabolicity of the conduction band leads
to a nonlinear dielectric response with saturating nonlinearity. Due to
the nonlinearity saturation the pulse can be trapped in a self-generated
guide, and the formation of stable two-dimensional spatial solitons can
take place.
-
- ROOM 3
-
- 08:30 - 10:30
- Session: Generation and Application of Ultrashort Pulses
- Presider: Gunter Steinmeyer, Swiss Federal Institute of Technology,
SWITZERLAND
-
- CMB1 8:30 - 8:45
- Mirror Design to Facilitate Fabrication of a Ultra-Short Pulse Ti:Sapphire
Oscillator, Hideyuki Takada, Masayuki Kakehata, Kenji Torizuka,
Electrotechnical Laboratory, Ibaraki, JAPAN
- We design a mirror, which has the layers with optical thickness of
more than 100 nm and the potential dispersion for sub-6 fs Ti:sapphire
oscillator. The dispersion characteristics can be allevaited by utilizing
three kinds of materials to a mirror.
-
- CMB2 8:45 - 9:00
- Double-Chirped Mirror Pairs Covering One Octave of Bandwidth, Uwe
Morgner, R. Ell, Thomas Schibli, P. Wagenblast, F.X. Kaertner, University
of Karlsruhe, Karlsruhe, GERMANY, James Fujimoto, E.P. Ippen, MIT, Cambridge,
MA, USA, Volker Scheuer, G. Angelow, Theo Tschudi, Darmstadt University
of Technology, Darmstadt, GERMANY
- An analytic design and fabrication of double-chirped mirror pairs with
reflectivities greater than 99.5% and controlled group delay dispersion
over one octave of bandwidth is presented.
-
-
- CMB3 9:00 - 9:30 (Invited)
- Ultrafast Solid-State Lasers, Ursula Keller, Swiss Federal
Institute of Technology, Zurich, SWITZERLAND
- Today's ultrafast all-solid-state lasers continue to demonstrate unsurpassed
performances in terms of pulse duration (ª5-fs range), pulse repetition
rates (ª60 GHz) and average power (27-W for picosecond pulses and
16-W for femtosecond pulses).
-
-
- CMB4 9:30 - 9:45
- Mode Locked Nd:Glass Fiber Laser Using Intensity Dependent Defocusing
by Low-Temperature-Grown GaAs, Martin Leitner, Peter Glas, Marc
Wrage, T. Sandrock, Max-Born-Institute, Berlin, GERMANY, H. Legall, Axel
Heuer, Universitaet Potsdam, Potsdam, GERMANY, G. Apostolopoulos, Jens
Herfort, L. Daeweritz, Paul-Drude-Institut, Berlin, GERMANY
- We report on a diode pumped fiber laser at 1.06 µm with a new
mode locking device that uses the intensity dependent defocusing in low-temperature-grown
GaAs. Z-scan experiments with LT-GaAs layers confirm the defocusing effect.
-
-
- CMB5 9:45 - 10:00
- High Power THz Radiation from an Optimized InAs Emitter in a Magnetic
Field Irradiated with Femtosecond Laser Pulses, Eiji Kawahata, Institute
for Molecular Science, Okazaki, JAPAN, Shingo Ono, Science University of
Tokyo, Tokyo, JAPAN, Takayuki Yano, Hideyuki Ohtake, Nobuhiko Sarukura,
Institute for Molecular Science, Okazaki, JAPAN, Takeyo Tsukamoto, Science
University of Tokyo, Tokyo, JAPAN
- We have optimized the geometry of an InAs THz-radiation emitter irradiated
with femtosecond laser pulses in a magnetic field. As a result, THz radiation
can be detected by a room-temperature pyroelectric thermal receiver.
-
-
- CMB6 10:00 - 10:15
- Laser Written Waveguides in Glasses and Crystals, Matthias
Will, S. Nolte, J.-P. Ruske, F. Wunderlich, Andreas Tuennermann, Friedrich-Schiller-Universitaet
- Jena, Jena, GERMANY
- Ultrashort laser pulses focused inside optical transparent bulk materials
create localized refractive index changes. Optical waveguides have been
written and investigated with this technique.
-
-
- CMB7 10:15 - 10:30
- Photon Echo Spectroscopy in the Single Optical-Cycle Regime,
Maxim Pshenichnikov, Andrius Baltuska, Douwe Wiersma, University of
Groningen, Groningen, THE NETHERLANDS
- The formalism of photon echo spectroscopy with ultrashort pulses that
consist of only a few optical cycles is discussed. The pure dephasing time
of electrons solvated in water is measured to be ~1.6 fs. The breakdown
of the rotating wave approximation is addressed.
-
-
- 11:00 - 13:00
- Session: High Speed Components and Systems
- Presider: TBA
-
-
- CMH1 11:00 - 11:30 (Invited)
- 40 Gbit/s OTDM-WDM Transmulti-plexers, Mario Puleo, CSELT,
Torino, ITALY
- Direct interconnection between very high speed OTDM trunks and WDM
networks, keeping the signal in the optical domain, is an attractive feature
for high capacity all-optical networks. Different approaches exploiting
semiconductor devices as SOAs, MZI-IWCs, multi-section lasers have been
demonstrated, achieving throughputs up to 40 Gbit/s.
-
-
- CMH2 11:30 - 11:45
- All-Optical 3R Regeneration and Wavelength Conversion in an Integrated
SOA/DFB Laser: Experiment and Simulation, Vishal Saxena, M. Owen,
M.F.C. Stephens, A. Wonfor, R.V. Penty, Ian White, University of Bristol,
Clifton, Bristol, UK
- Simultaneous all-optical 3R regeneration and NRZ to RZ format conversion
is demostrated for the first time in a single chip integrated SOA/DFB laser.
The nonlinear transfer function of the SOA/DFB achieves reshaping whilst
gain switching the DFB with an extracted clock achieves retiming.
-
-
- CMH3 11:45 - 12:00
- Ultrafast Saturable Absorber Device with Heavy-Iron Irradiated Quantum
Wells for High Bit-Rate Optical Regeneration at 1.55 µm, Juliette
Mangeney, J.-L. Oudar, G. Aubin, J.C. Harmand, G. Patriarche, France Telecom-CNET,
Bagneux, FRANCE, N. Stelmakh, J-M. Lourtioz, Universite Paris-Sud, Orsay
, FRANCE
- A saturable absorber vertical cavity device at 1.55µm wavelength
is shown to operate at repetition rates of at least 10GHz, with capabilities
beyond 100GHz. Power discrimination measurements on modulated signals show
an amplification (up to x4) of the modulation contrast.
-
-
- CMH4 12:00 - 12:15
- High-Speed 1.55µm Fe-Doped Multiple Quantum Wells Saturable
Absorber, A. Marceaux, S. Loualiche, H. Folliot, O. Dehaese, J.
Even, B. Lambert, INSA de Rennes, Rennes FRANCE
- We present a high-speed 1.55µm multiple quantum wells saturable
absorber. We show that the switching speed can be enhanced by more than
a factor 6 by Fe-doping without degrading the contrast ratio of the device.
-
-
- CMH5 12:15 - 12:30
- Optimization of Be-Doped Low-Temperature-Grown GaAs Layers for Ultrafast
Optoelectronic Applications, Jean-Fransois Roux, Universite de Savoie,
Le Bourgert du Lac, FRANCE, J. Siegert, Saulius Marcinkevicius, Royal Institute
of Technology, Stockholm, SWEDEN, M. Kaminska, A. Wolos, Warsaw University
of Technology, Warsaw, POLAND, K. Bertulis, Semiconductor Physics Institute,
Vilnius, LITHUANIA, J.-L. Coutaz, Universite de Savoie, Le Bourger du Lac,
FRANCE, A. Krotkus, Semiconductor Physics Institute, Vilnius, LITHUANIA
- We present fabrication and characterization of Be-doped low-temperature-grown
GaAs annealed layers with subpicosecond response times. These thick, high
resistivity layers with good structure quality show excellent parameters
for ultrafast optoelectronics
-
- CMH6 12:30 - 12:45
- Novel Photoconductive Detector with Buried FIB Implanted p-Doped
Stripe, Markus Vitzethum, M. Ruff, Universitaet Erlangen-Nuernberg,
Erlangen, GERMANY, Peter Kiesel, S. Malzer, G.H. Doehler, Universitaet
Erlangen-Nuernberg, Erlangen, GERMANY, J. Koch, A.D. Wieck, Ruhr Universitaet
Bochum, Bochum, GERMANY
- We present a novel concept for an extremely sensitive detector with
high photocoductive gain. P-doping by focused ion beam implantation and
MBE overgrowth is used to fabricate an extremely low capacitance nip structure.
-
- CMH7 12:45 - 13:00
- Ultrafast Photoconductive Switches with Currrent Block Layers Fabricated
by Using an Atomic Force Microscope, Taro Itatani, Hideki Kikkawa,
Takeyoshi Sugaya, Kazuhiko Matsumoto, Tadashi Nakagawa, Kenji Yonei, Yoshinobu
Sugiyama, Electrotechnical Laboratory, Ibaraki, JAPAN
- We have demonstrated ultrafast response as 310 fs for photoconductive
switches with current block layers. The switch was made by micro-anodization
process by using an atomic force microscope.
-
- ROOM 4
-
- 08:30 - 10:30
- Session: New Gain Media
- Presider: Peter Blood, Cardiff University, UK
-
-
- CMC1 8:30 - 9:00 (Invited)
- Performance Characteristics of CW InGaN Multiple Quantum Well Laser
Diodes, Michael Kneissl, Xerox PARC, Palo Alto, CA, USA
- The performance characteristics of InGaN MQW laser diodes grown on
sapphire substrates is compared to lasers on laterally epitaxially overgrown
GaN on sapphire. The effect of dislocation density on the electronic and
optical properties is discussed.
-
-
- CMC2 9:00 - 9:15
- Selective Excitation of Different Modes in Non-Circular GaN Microdisk
Lasers, Nathan Rex, Richard Chang, Yale University, New Haven, CT,
USA, Louis Guido, Viriginia Tech, Blacksburg, VA
- Various (stable and/or chaotic) types of microcavity modes provide
feedback for non-circular GaN microdisks to emit stimulated emission directionally.
Focused pumping at different locations on the GaN top face selects certain
types of lasing modes.
-
-
- CMC3 9:15 - 9:30
- Optical and Material Studies of Indium Compositional Fluctuations
in InGaN/GaN Quantum Well Structures, Shih-Wei Feng, National Taiwan
University, Taipei, TAIWAN, R.O.C., Yen-Sheng Lin, Chung Cheng Institute
of Technology, Taoyuan, TAIWAN, R.O.C., Chi-Chih Liao, National Taiwan
University, Taipei, TAIWAN, R.O.C., Kung-Jeng Ma, Chung Cheng Institute
of Technology, Taiwan, TAIWAN, R.O.C., C. C. Yang, National Taiwan University,
Taipei, TAIWAN, R.O.C., Chang-Cheng Chou, Chia-Ming Lee, Jen-Inn Chyi,
National Central University, Chung-Li, TAIWAN, R.O.C.
- Optical and material features on indium aggregation and phase separation
in MOCVD grown InGaN/GaN quantum well structures were studied with various
tools to show their impacts on photon emission characteristics.
-
- CMC4 9:30 - 10:00 (Invited)
- High Power Quantum Dot Lasers, Dieter Bimberg, Technical
University of Berlin, Berlin, GERMANY
- Quantum dot (QD) lasers demonstrate lower threshold current densities
and extended wavelength ranges for a given substrate as compared to quantum
well devices. CW 3-4 W (1.3-0.9 µm) operation of GaAs-based QD lasers
is realized.
-
-
- CMC5 10:00 - 10:15
- 150 nm Tuning Range in a Grating-Coupled External Cavity Quantum
Dot Laser, H. Li, Guangtian Liu, , P. Varangis,, USA, Timothy Newell,
A. Stintz, B. Fuchs, K.J. Malloy, Luke Lester, University of New Mexico,
Albuquerque, NM, USA
- A quantum dot laser in a grating-coupled external cavity is shown to
operate across a 150 nm tuning range in the near-infrared with a threshold
current density that is no greater than 1.1 kA/cm2.
-
- CMC6 10:15 - 10:30
- Performance of AlGaAs/GaAs Quantum Wire Lasers Fabricated on Sub-µm-Pitch
Gratings: In Both Distributed Feedback-and-Wire Directions, Tae
Geun Kim, Chang-Sik Son, Electrotechnical Laboratory, Ibaraki, JAPAN, Mutsuo
Ogura, CREST, Tsukuba, Ibaraki, JAPAN
- AlGaAs/ GaAs quantum wire array (QWA) lasers are fabricated by one-step
metalorgantic chemical vapor deposition (MOCVD) on sub-µm-pitch gratings.
Room-temperture lasing characteristics are demostrated in both distributed
feedback (DFB)- and wire-directions. Gain-couple DFB effects through QWA
are also discussed.
-
-
-
- 11:00 - 12:30
- Session: Laser Cleaning
- Presider: Costas Fotakis, F.O.R.T.H.-I.E.S.L., Crete,
GREECE
-
- CMI1 11:00 - 11:15
- Laser Removal of Particles Using Tunable Wavelength, C. Curran,
Jong-Myoung Lee, Kenneth Watkins, University of Liverpool, Liverpool, UK
- Wavelength dependency in the removal of small particles from semiconductor
devices has been investigated using an Optical Parametric Oscillator which
can be tuned to various wavelength (410-2300 nm), since wavelength is one
of the most crucial parameters for successful laser cleaning.
-
- CMI2 11:15 - 11:30
- Laser Cleaning of Steels After High Temperature Oxidation, P.
Psyllaki, P. Pasquet, Universite de Bourgogne, Dijon, FRANCE, P. Meja,
IRPHE-LP3, Marseilles, FRANCE, Roland Oltra, Universite de Bourgogne, Dijon,
FRANCE, M. Autric, IRPHE-LP3, Marseilles, FRANCE
- The use of a nanosecond pulsed Nd:YAG laser is a powerful technique
for the removal of thermal oxides of different chemical compositions, developed
on steel surfaces during high temperature oxidation, due to the selective
fracture of the oxide/metal interface.
-
-
-
- CMI3 11:30 - 11:45
- Laser Generated Cavitation Near a Curved Surface, M.J. Gaze,
D.C. Emmony, Loughborough University, Loughborough, Leics., UK
- Optically produced cavities were studied using high time and space
resolution imaging. The bubbles were produced in water near both convex
and concave surfaces which were found to strongly modify the growth and
collapse phases.
-
- CMI4 11:45 - 12:00
- Thermomechanical Effect Induced by Pulse Laser Heating, Xianfan
Xu, Purdue University, West Lafayette, IN, USA, Xinwei Wang, Purdue University,
West Lafayette, IN, USA
- This work investigates thermomechanical phenomena induced by nano,
pico, and femtosecond laser pulses. Non-equilibrium between electron and
lattice, non-Fourier thermal transport, and coupling between the thermal
and stress field are considered. Results show a rapid decay of the stress
generated by femtosecond laser pulses, which explains the minimal damage
in ultrafast laser-material processing.
-
-
- CMI5 12:00 - 12:15
- Photochemical Effects in the Ultraviolet Laser Ablation of Polymers.
Implication for the Laser Cleaning of Molecular Substrates, Demetrios
Anglos, Institute of Electronic Structure & Laser, Crete, GREECE, Savas
Georgiou, University of Ioannina, Ioannina, GREECE
- A novel experimental approach is employed for the systematic assessment
of the nature and extent of photochemical modifications induced on molecular
substrates upon ultraviolet laser ablation. The implications of the results
for the mechanisms of the ultraviolet ablation with different laser pulse
widths are discussed. Additionally, the optimization of procedures for
the implementations of UV laser ablation is discussed with specific examples
drawn from the excimer-laser based restoration of painted artworks.
-
- CMI6 12:15 - 12:30
- Paint Removal with a High Repetition Rate TEA CO2 Laser, D.E.
Roberts, National Laser Centre, Pretoria, SOUTH AFRICA
- We are investigating the efficiency of paint removal with high average
power (Pav>1 KW) TEA CO2 lasers. We find that high repetition rates
(f> 1KHz) can lead to significant improvements in paint and primer removal
efficiency.
-
-
- 12:30 - 13:30
- Session: Long Wavelength Diode Lasers
- Presider: John Marsh, University of Glasgow, Scotland, UK
- CML1 12:30 - 12:45
- Low Threshold GaAsSb/GaAs Broad Area Laser Diodes Emitting at 1220
nm, Juergen Joos, Irene Ecker, Karl Ebeling, University of Ulm,
Ulm, GERMANY
- GaAs-based laser diodes containing a GaAsSb quantum well active layer
are presented. The devices were grown by gas source molecular beam epitaxy.
They exhibit a room-temperature threshold current density of 375 Acm^-2
at an emission wavelength of 1221 nm.
-
- CML2 12:45 - 13:00
- High Temperature GaInAsSb/GaAlAsSb Quantum Well Continuous Wave
Lasers, D.A. Yarekha, G. Glastre, A Perona, Y. Rouillard, A.N. Baranov,
G. Boissier, Aurore Vicet, C. Alibert, Universite Montpellier II, Montpellier
, FRANCE
- Narrow ridge 5-µm wide single mode GaInSbAs/ GaAlSbAs strained
quantum well lasers have been fabricated. The lasers are able to operate
in continuous wave regime at temperatures up to 130°C and up to 180°C
in pulsed regime.
-
-
- CML3 13:00 - 13:15
- Optical Gain and Loss in 2.3-2.5µm InGaAsSb/AlGaAsSb QW Broad-Area
and Ridge-Waveguide Lasers, D.Z. Garbuzov, Sarnoff Corporation,
Princeton, NJ, USA, Gregory Belenky, D.V. Donetsky, SUNY - Stony Brook,
Stony Brook, NY, USA, Ray Martinelli, H. Lee, John Connolly, Sarnoff Corporation,
Princeton, NJ, USA
- Current and temperature dependencies of the modal gain and static characteristics
in 2.3-2.5µm InGaAsSb/ AlGaAsSb/GaSb broad-area and ridge-waveguide
lasers were measured. We observed switching of the lasing energy with current
and temperature.
-
-
- CML4 13:15 - 13:30
- 4 - 6 µm Vertical Cavity Surface Emitting Laser Based on Lead
Salt Compounds, Thomas Schwarzl, G. Springholz, Johannes Kepler
University Linz, Linz, AUSTRIA, M. Aigle, H. Pascher, Universitaet Bayreuth,
Bayreuth, GERMANY, W. Heiss, Johannes Kepler University Linz, Linz, AUSTRIA
- Mid infrared vertical laser emission from PbTe quantum wells in IV-VI
microcavity structures is demonstrated. The vertical cavity laser structures
were grown by molecular-beam epitaxy. We observed optically pumped stimulated
emission at 4.8 and 6.1 µm.
-
- ROOM 5
-
- 08:30 - 10:30
- Session: C.W. Optical Parametric Oscillators
- Presider: Marc de Micheli, Universite de Nice, FRANCE
-
-
- CMD1 8:30 - 9:00 (Invited)
- Diode-pumped Optical Parametric Oscillators, Klaus-Jochen Boller,
M.E. Klein, D.H. Lee, P. Grosse, H. Ridderbusch, M.A. Tremont, A.
Robertson, J.-P. Meyn, Richard Wallenstein, Universitaet Kaiserslautern,
Kaiserslautern, GERMANY
- We report on OPOs directly pumped with diode lasers, for compact all-optical
phase-coherent frequency-division, for the generation of continuously tunable
idler radiation, and for all-electronic, high-speed, wide-range wavelength
access with ultra-high repetition rate synchronously pumped OPOs.
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