Advance Program:
Conference Information:
Recent developments in planar waveguide and photonic crystal technologies as well as in novel materials have led to the possibility of achieving the miniaturization of nonlinear optical devices, which so far had required the use of either bulk crystals or km-long optical fibers. Today, centimeter scale Raman amplifiers and lasers can be realized in a silicon or GaP chips, instead of using kilometers of silica fibers. Similarly, the development of Bi-doped optical fibers allows for stable and efficient nonlinear interactions within few centimeters.
The key advantages of the new class of chip-scale nonlinear optical devices are the possibility of integration with electronic devices on the same chip, their low-power operation and ultimately a significant cost savings which will render all-optical signal processing functionalities a practical reality.
The major goals of this topical meeting are to:
- Discuss the status and advances in the enabling technologies
- Promote and facilitate the development of new chip-scale devices
- Provide guidance for the best use of existing devices by establishing a fruitful exchange of ideas and contacts between researchers from different disciplines
The enabling nonlinear optics materials to be addressed by this topical meeting will include:
- Indirect Gap Semiconductor materials: Silicon and Germanium
- Direct Gap Semiconductor materials: GaP and other III-V composites
- Highly Nonlinear and Doped Fibers
- Glass Based Planar Lightwave Circuits
- Lithium Niobate integrated optical circuits
The basic nonlinear optical effects and applications will include but not limited to:
- Raman amplifiers, and lasers
- Broadband wavelength converters
- Continuum Generation
- Soliton propagation and switching
